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 SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1634
DESCRIPTION *With TO-220Fa package *DARLINGTON *High speed switching *Good linearity of hFE APPLICATIONS *Power switching applications
PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current (DC) Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 100 100 7 8 12 0.5 50 150 -55~150 UNIT V V V A A A W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=0.2A , IB=0 IC=5A; IB=5mA IC=5A ;IB=5mA VCB=100V;IE=0 VCE=100V; IB=0 VEB=7V; IC=0 IC=5A ; VCE=3V 1500 MIN 100
2SD1634
SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICEO IEBO hFE
TYP.
MAX
UNIT V
1.5 2.0 100 100 5 10000
V V A A mA
Switching times ton ts tf Turn-on time Storage time Fall time IC=8A ;IB1=8mA IB2=-8mA; VCC=50V 3.0 5.0 3.0 s s s
hFE Classifications Q 1500-6000 P 5000-10000
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1634
Fig.2 Outline dimensions (unindicated tolerance:0.15 mm)
3


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